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| (R) STPS3L40S POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 3A 40 V 150C 0.44 V FEATURES AND BENEFITS s s s n NEGLIGIBLE SWITCHING LOSSES LOW THERMAL RESISTANCE LOW FORWARD VOLTAGE DROP AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Schottky rectifier suited for Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in SMC, this device is intended for use in DC/DC chargers. SMC (JEDEC DO-214AB) ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM PARM Tstg Tj dV/dt *: Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage Tc = 120C = 0.5 tp = 10 ms Sinusoidal tp=2 s square F=1kHz tp = 1s Tj = 25C Value 40 10 3 75 1 1300 - 65 to + 175 150 10000 Unit V A A A A W C C V/s dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/5 July 2003 - Ed: 2A STPS3L40S THERMAL RESISTANCES Symbol Rth(j-l) Junction to leads Parameter Value 18 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 125C VF * Forward voltage drop Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Typ. Max. 100 Unit A mA V VR = VRRM 16 IF = 3 A IF = 3 A IF = 6 A IF = 6 A 0.52 0.40 40 0.5 0.44 0.62 0.58 To evaluate the maximum conduction losses use the following equation : P = 0.30 x IF(AV) + 0.047 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Average forward current versus ambient temperature( = 0.5). IF(av)(A) 3.5 Rth(j-a)=Rth(j-l) 3.0 =1 2.5 2.0 1.5 Rth(j-a)=75C/W T 1.0 0.5 tp T IF(av) (A) 0.5 1.0 1.5 2.0 2.5 =tp/T 3.0 3.5 4.0 0.0 =tp/T tp Tamb(C) 50 75 100 125 150 0 25 2/5 STPS3L40S Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration (epoxy printed circuit board, e(Cu)=35m, recommended pad layout). Zth(j-a)/Rth(j-a) 1.0 0.8 IM(A) 14 12 10 Ta=25C 8 6 4 IM 0.6 0.4 = 0.5 Ta=75C = 0.2 = 0.1 Ta=125C t 2 0 1E-3 0.2 Single pulse =0.5 t(s) 1E-2 1E-1 1E+0 tp(s) 1E+0 1E+1 1E+2 1E+3 0.0 1E-1 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). Fig. 8: Junction capacitance versus reverse voltage applied (typical values). IR(mA) 5E+1 1E+1 1E+0 Tj=125C Tj=100C C(pF) 600 F=1MHz Tj=25C 100 1E-1 Tj=25C 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 35 40 VR(V) 10 1 2 5 10 20 40 3/5 STPS3L60S Fig. 9: Forward voltage drop versus forward current (maximum values). IFM(A) 50.00 10.00 Tj=125C (Typical values) Fig. 10: Non repetitive surge peak forward current versus number of cycles. IFSM(A) 80 70 60 50 F=50Hz Tj initial=25C 1.00 Tj=125C 40 Tj=25C 30 20 10 0 0.10 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Number of cycles 1 10 100 1000 0.01 0.0 Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m). Rth(j-a) (C/W) 100 80 60 40 20 S(Cu) (cm) 0 0 1 2 3 4 5 4/5 STPS3L40S PACKAGE MECHANICAL DATA SMC E1 DIMENSIONS REF. D Millimeters Min. 1.90 0.05 2.90 0.15 7.75 6.60 4.40 5.55 0.75 Max. 2.45 0.20 3.2 0.41 8.15 7.15 4.70 6.25 1.60 Inches Min. 0.075 0.002 0.114 0.006 0.305 0.260 0.173 0.218 0.030 Max. 0.096 0.008 0.126 0.016 0.321 0.281 0.185 0.246 0.063 E A1 C L A2 A1 A2 b c E E1 E2 D L b E2 FOOT PRINT (in millimeters) 3.3 2.0 Ordering type STPS3L40S s s 4.2 Marking S3L4 2.0 Package SMC Weight 0.24g Base qty 2500 Delivery mode Tape and reel EPOXY MEETS UL94,V0 BAND INDICATES CATHODE Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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